EFFECT OF KR-MIXING AND THERMAL-TREATMENT ON CO-SILICIDE FORMATION()

Authors
GAIDUK PI KOMAROV FF WITZMANN A ZENTGRAF A SCHIPPEL S
Citation
Pi. Gaiduk et al., EFFECT OF KR-MIXING AND THERMAL-TREATMENT ON CO-SILICIDE FORMATION(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 231-236
Citations number
14
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
94
Issue
3
Year of publication
1994
Pages
231 - 236
Database
ISI
SICI code
0168-583X(1994)94:3<231:EOKATO>2.0.ZU;2-5
Abstract
Silicide formation in the Co/Si system during ion beam mixing with Kr at elevated temperatures and subsequent annealing has been studied as a function of Kr+ dose, implantation temperature and annealing condit ions. It was found that CoSi is formed during ion beam mixing even at room temperature. The formation of Co2Si is only detected for mixing a t a target temperature of 350 degrees C. During the additional thermal treatment at temperatures between 600 degrees C and 1000 degrees C th e whole Co-layer reacts with silicon and polycrystalline CoSi2 grows. The grain size of CoSi2 was found to depend on Kr+ dose, implantation temperature and substrate orientation.