Microcrystalline and amorphous boron thin films were implanted with ni
trogen ions at energies from 25 to 125 keV and with doses from 2 X 10(
17) to 1 X 10(18) at./cm(2) at temperatures below 200 degrees C. The s
tructure of boron nitride phases after ion implantation, formation of
phases and phase transformations were investigated by TEM and TED meth
ods. The cubic boron nitride phase is revealed. The microhardness of t
he formed films was satisfactorily explained in terms of chemical comp
ound formation by polyenergetic ion implantation. The influence of the
copper impurity on the formation of the cubic boron nitride phase is
demonstrated. It has also been shown that low concentrations of copper
promote cubic BN boundary formation.