EPR, XRD AND OPTICAL REFLECTIVITY STUDIES OF RADIATION-DAMAGE IN SILICON AFTER HIGH-ENERGY IMPLANTATION OF NI IONS

(111) silicon has been implanted with 6 MeV Ni-68 ions at various temp eratures in a dose range from 5 X 10(12) to 2 x 10(17) Ni/cm(2). Quant itative depth resolved optical studies on the radiation damage are com pared with EPR and XRD measurements, giving direct information on exis ting defect species and changes of the lattice period, respectively. R esults of EPR investigations support the interpretation of the dose an d temperature dependence of the optically detected damage given by Lin dner and te Kaat [J. Mater. Res. 3 (1988) 1238], who base themselves o n the damage model of Hecking et al. [Nucl. Instr. and Meth. B 15 (198 6) 760]. EPR lines of five different point defect (Si-A4, Si-P1, Si-A6 , Si-B2, Si-P3) and of amorphous material are observed. The use of dif ferent experimental methods allows for a comparison of the individual sensitivities for several kinds of damage.