MAGNETIC-RESONANCE AND ANTICROSSING OF LEVELS OF EXCITONS TRAPPED AT OPPOSITE INTERFACES IN TYPE-II GAAS ALAS SUPERLATTICES/

Authors
BARANOV PG MASHKOV IV ROMANOV NG GOURDON C LAVALLARD P PLANEL R
Citation
Pg. Baranov et al., MAGNETIC-RESONANCE AND ANTICROSSING OF LEVELS OF EXCITONS TRAPPED AT OPPOSITE INTERFACES IN TYPE-II GAAS ALAS SUPERLATTICES/, JETP letters, 60(6), 1994, pp. 445-450
Citations number
9
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
60
Issue
6
Year of publication
1994
Pages
445 - 450
Database
ISI
SICI code
0021-3640(1994)60:6<445:MAAOLO>2.0.ZU;2-8
Abstract
Excitons trapped at different interfaces in type-II GaAs/AlAs superlat tices have been studied selectively through optical detection of magne tic resonance. That excitons are trapped at opposite interfaces is pro ved unambiguously by measurements of an anticrossing of exciton levels based on the linear polarization of luminescence. Excitons characteri zed by exchange splittings corresponding to the trapping of an electro n and a hole at points separated by a distance equal to the period of the superlattice have been detected. (C) 1994 American Institute of Ph ysics.