Porous silicon prepared with anodic currents of 5 to 30 mA/cm(2) are c
haracterized for structural and electronic properties of surface using
photoluminescence, grazing angle X-ray diffraction, photoconductivity
, thermally stimulated exo electron emission and work function measure
ments. The observed results indicate that with increasing porosity the
crystallite size decreases and the amount of silicon hydride and oxid
e-type species increases, exhibiting a tendency similar to that of hyd
rogenated amorphous silicon and hydrogenated microcrystalline silicon.
Free-standing powder of porous silicon, characterized by bright photo
luminescence at 730 nm, showed crystallites of nanometre dimensions un
der the transmission electron microscope.