ION-IMPLANTATION EFFECTS IN GASB

Authors
MILNES AG LI XL POLYAKOV AY SMIRNOV NB GOVORKOV AV BORODINA OM TUNITSKAYA IV KOZHUKHOVA EA MILVIDSKAYA AG
Citation
Ag. Milnes et al., ION-IMPLANTATION EFFECTS IN GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 129-136
Citations number
15
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
27
Issue
2-3
Year of publication
1994
Pages
129 - 136
Database
ISI
SICI code
0921-5107(1994)27:2-3<129:IEIG>2.0.ZU;2-Q
Abstract
The effects of ion implantation of Zn, Mg, Si, C, S and Se into n- and p-type GaSb have been studied. It is shown that low dose (5 x 10(13) cm(-2)) implantations of acceptor impurities, Zn, Mg and C at 60 keV a re suitable for preparing good quality p-n GaSb diodes.