HYDROGEN PASSIVATION EFFECTS IN QUATERNARY SOLID-SOLUTIONS OF INGAASSB LATTICE-MATCHED TO GASB

Authors
POLYAKOV AY TUNITSKAYA IV DRUZHININA LV GOVORKOV AV SMIRNOV NB KOZHUKHOVA EA BORODINA OM MILNES AG LI XL PEARTON SJ BALMASHNOV AA
Citation
Ay. Polyakov et al., HYDROGEN PASSIVATION EFFECTS IN QUATERNARY SOLID-SOLUTIONS OF INGAASSB LATTICE-MATCHED TO GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 137-141
Citations number
14
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
27
Issue
2-3
Year of publication
1994
Pages
137 - 141
Database
ISI
SICI code
0921-5107(1994)27:2-3<137:HPEIQS>2.0.ZU;2-T
Abstract
Hydrogen passivation effects in InAs-related and GaSb-related InGaAsSb layers lattice matched to GaSb have been studied. Strong passivation of shallow acceptors has been observed and is explained by the assumpt ion that hydrogen is a deep donor in these materials. The effects of t he hydrogen treatment mode on the passivation efficiency are also disc ussed, as well as the changes induced by hydrogen treatment in photolu minescence spectra of the layers.