SEGREGATION IN BRIDGMAN GROWN INGOTS OF HG1-XCDXTE

The axial and radial distribution of the chemical composition was stud ied in Hg1-xCdxTe (MCT) single-crystalline ingots which were grown by the Bridgman method, employing different growth rates and subsequent t hermal annealing. The growth conditions were chosen to obtain the larg est single-crystalline volume of ingots with a chemical composition x = 0.2, thus enabling the use of MCT in IR detectors for the second tra nsmission atmospheric window (8-14 mu m). In the evaluation of the gro wth conditions, not only the composition variation but also the crysta lline quality, the subgrain size and the misorientation between adjace nt subgrains must be taken into account. All these factors have delete rious effects on the electrical properties of semiconductors.