Mr. Deshpande et al., LOW-DIMENSIONAL RESONANT-TUNNELING AND COULOMB-BLOCKADE - A COMPARISON OF FABRICATED VERSUS IMPURITY CONFINEMENT, Semiconductor science and technology, 9(11), 1994, pp. 1919-1924
Nanometre-scale fabrication techniques, combined with epitaxial resona
nt tunnelling structures, now routinely allow the study of quasi-0D co
nfined electron systems. In addition to energy level separations that
are tunable by the confining potentials, these systems can also exhibi
t Coulomb blockade. Surprisingly similar effects are also observed for
conventional, unconfined resonant tunnelling devices. We have recentl
y discovered that the turn-on characteristics of nearly all resonant t
unnelling devices exhibit sharp peaks in conductance, attributable to
tunnelling through single quantum well donor states. These unintention
al donor states are distributed in energy, depending on position in th
e quantum well. We have performed electronic spectroscopy of these sta
tes, and consistently find binding energies approximately 10 meV great
er than expected for a single quantum well donor due to quantum well f
luctuations. We present detailed measurements of single-electron tunne
lling through a single donor bound state utilizing simple non-confined
heterostructures.