SUPPRESSION AND ORIGIN OF SOFT ESD FAILURES IN A SUBMICRON CMOS PROCESS

Authors
KUPER F LUCHIES JM BRUINES J
Citation
F. Kuper et al., SUPPRESSION AND ORIGIN OF SOFT ESD FAILURES IN A SUBMICRON CMOS PROCESS, Journal of electrostatics, 33(3), 1994, pp. 313-325
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Journal of electrostatics → ACNP
ISSN journal
03043886
Volume
33
Issue
3
Year of publication
1994
Pages
313 - 325
Database
ISI
SICI code
0304-3886(1994)33:3<313:SAOOSE>2.0.ZU;2-X
Abstract
Soft failures occurring after low-level ESD stress of thick and thin o xide NMOSTs in a submicron CMOS process have been studied. Simple drai n engineering appears to have a dramatic improving effect. Simulation is used to study the cause for the soft failures.