LONG-WAVE IR EMISSION IN N-INSB IN STRONG ELECTRIC-FIELDS

The intraband emission in the far-IR part of the spectrum (lambda=80-1 10 mu m; the passive energy region) of hot electrons in n-InSb has bee n studied experimentally and theoretically over a wide temperature ran ge (15<T<80 K). The effects of various scattering mechanisms on the oc currence of the emission in the crystal are analyzed. The emission com es primarily from electrons with an energy smaller than the energy of an optical phonon. The predominant scattering mechanism is a scatterin g by acoustic phonons. (C) 1994 American Institute of Physics.