ELECTRICAL-PROPERTIES OF 3C-SIC SI HETEROJUNCTIONS/

The electrical properties of n3C-SiC/p-Si heterojunctions grown by che mical vapor deposition on Si(111) substrates in the SiH4-C2HCl3-H-2 sy stem at 1100 degrees C have been studied. The heterojunctions obtained have good rectifying properties and a high speed. The forward current -voltage characteristic can be described by I proportional to exp(-qU/ nkT)exp(qV/nkT), where U=0.87+/-0.02 eV is the contact potential diffe rence, and n=1.1-1.2 is the ideality factor. The predominant mechanism for the forward current transport involves carrier recombination thro ugh trapping levels with a density of states similar to 10(12) cm(-2) at the heterojunction, displaced from the middle of the band gap. (C) 1994 American Institute of Physics.