EFFECT OF PHOTOEXCITATION ON THE EFFICIENCY OF DEFECT CREATION DURINGELECTRON-BOMBARDMENT OF SILICON

Authors
BOLDYREV SN MORDKOVICH VN OMELYANOVSKAYA NM FEKLISOVA OV YARYKIN NA
Citation
Sn. Boldyrev et al., EFFECT OF PHOTOEXCITATION ON THE EFFICIENCY OF DEFECT CREATION DURINGELECTRON-BOMBARDMENT OF SILICON, Semiconductors, 28(10), 1994, pp. 1009-1011
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
10
Year of publication
1994
Pages
1009 - 1011
Database
ISI
SICI code
1063-7826(1994)28:10<1009:EOPOTE>2.0.ZU;2-9
Abstract
Additional illumination during bombardment of silicon with 4-MeV elect rons results in a substantial decrease in the concentration of stable vacancy complexes. The effect of the photoexcitation can extend to a d istance of hundreds of microns from the illuminated surface. Changes i n the charge state of mobile point defects and in the kinetics of defe ct reactions as the result of an excess density of minority carriers a re discussed as the most likely causes of the observed effect. (C) 199 4 American Institute of Physics.