Jp. Krumme et al., ION-BEAM SPUTTER-DEPOSITION PROCESS FOR Y1BA2CU3O7-DELTA THIN-FILM STRUCTURES, Journal of materials research, 9(11), 1994, pp. 2747-2760
Ion-beam sputter deposition (IBS) has been developed to a fully oxygen
-compatible technology for growth of complex oxides, such as Y1Ba2Cu3O
7-delta (YBCO) thin films. The IBS system consists of an rf-plasma ion
source with molybdenum grids for sputtering, a dc-plasma electron sou
rce for space charge compensation, stoichiometric YBCO and NGO targets
, a beam chopper with BaO2, Cu, and Nd blades for stoichiometry contro
l, and an ECR-oxygen-plasma source for in situ film oxidation and phot
oresist removal. Due to its complexity the IBS process is fully comput
er-controlled, A salient feature of IBS is the excellent crystallograp
hic and morphological properties of thin (100)/(010)- and (103)-orient
ed YBCO films on SrTiO3 (STO) and NdGaO3 (NGO) substrates. Sharp inter
faces and good superconducting properties render this technology feasi
ble for the fabrication of SIS-ramp-junction SQUID's.