0.10-MU-M GRADED INGAAS CHANNEL INP HEMT WITH 305-GHZ FT AND 340-GHZ FMAX

Authors
WOJTOWICZ M LAI R STREIT DC NG GI BLOCK TR TAN KL LIU PH FREUDENTHAL AK DIA RM
Citation
M. Wojtowicz et al., 0.10-MU-M GRADED INGAAS CHANNEL INP HEMT WITH 305-GHZ FT AND 340-GHZ FMAX, IEEE electron device letters, 15(11), 1994, pp. 477-479
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
11
Year of publication
1994
Pages
477 - 479
Database
ISI
SICI code
0741-3106(1994)15:11<477:0GICIH>2.0.ZU;2-E
Abstract
We report here 305 GHz f(T), 340 GHz f(max), and 1550 mS/mm extrinsic g(m) from a 0.10 mum In(x)Ga1-xAs/In0.52Al0.48As/InP HEMT with x grade d from 0.60 to 0.80. This device has the highest f(T) yet reported for a 0.10 mum gate length and the highest combination of f(T) and f(max) reported for any three-terminal device. This performance is achieved by using a graded-channel design which simultaneously increases the ef fective indium composition of the channel while optimizing channel thi ckness.