GROWTH AND CHARACTERIZATION OF ZNSE-BASED GREEN LASER-DIODES

By using a GaAs buffer layer, the lifetime of a laser diode exceeding 11 sec was obtained for a ZnCdSe/ZnSSe/ZnMgSSe single quantum well str ucture under room temperature continuous-wave operation with a light o utput power of 1 mW. Stimulated emission was observed at a wavelength of 536.5 nm with a threshold current of 45 mA (571 A/cm(2)) from separ ate-confinement heterostructure laser diodes. We also observed dark-li ne defects dong the < 100 > and the < 110 > directions, which were due to pre-existing defects, such as stacking faults after current inject ion by electroluminescence.