PREPARATION OF ZN2SIO4-MN THIN-FILMS BY S PIN-COATING METHOD

The phosphor films were prepared on a quartz plate by a spin coating m ethod using a sol-gel solution. The spin rate can be varied from 1000 to 4000 rpm and the spinning was carried out for 1 min under the irrad iation of an infrared light. The dried sample was calcined in air at v arious temperatures for 1 h. The film thickness and the emission inten sity decreased as spinning rate increased. The emission intensity of t he phosphor film prepared by this method was dependent on the film thi ckness and firing conditions. The emission properties of phosphor film s were discussed on the basis of the surface state of phosphor films.