TRANSIENT DIFFUSION OF GA IN AMORPHOUS-SILICON

The redistribution of Ga in amorphous silicon (a-Si) in the temperatur e range of 560-830 K by means of medium-energy ion scattering has been studied. During the initial 10 s of the annealing the diffusivity sho ws a transient behavior that is attributed to the change in the relaxa tion state of the amorphous matrix. From 560 to 830 K the diffusivity during relaxation is enhanced by seven to two orders of magnitude comp ared to the value for bulk a-Si. Possible models that show the observe d transient diffusion behavior are discussed.