CHARACTERIZATION STUDY OF STRAINED INXGA1-XAS GAAS SUPERLATTICES

InxGa1-xAs/GaAs strained layer superlattices were studied by means of double-crystal x-ray diffractometry (DCXD), transmission electron micr oscopy (TEM), and selected area x-ray photoelectron spectroscopy (SAXP S) depth profiling techniques. The quality of superlattices, strain in the sublayers, and their thickness and chemical composition were eval uated. The effect of the real superlattice structure on the shape of x -ray rocking curves has been revealed. It was concluded that full iden tification of nonperiodic defects and the initial stage of stress rela xation can be determined by combining DCXD and TEM methods. The result s of SAXPS depth profiling were found to be in good quantitative agree ment with DCXD and TEM data. The linear dependence of depth resolution Delta z on the sputtering depth, caused by sputtering induced develop ment of heterointerface roughness was determined in SAXPS profiles.