High-resolution transmission electron microscopy (HRTEM) has been appl
ied to study the atomic structure of the Si/TbSi2/(111)Si double-heter
ostructure interfaces. The unrelaxed geometrical models of Si/TbSi2/(1
11)Si interfaces can be systematically deduced from the dichromatic co
nstrained-coincidence-site-lattice patterns. The atomic structures wer
e determined by comparing HRTEM images with computer-simulated images.
The relationships of interface bonding and structures of epitaxial Si
/TbSi2 and epitaxial TbSi2/Si interfaces are discussed.