COMMENT ON EXPERIMENTAL INVESTIGATION AND MODELING OF THE ROLE OF EXTENDED DEFECTS DURING THERMAL-OXIDATION

In our recent article, we stated that Eq. (11) accounts for both the d iffusion of interstitials to stacking faults as well as the reaction e nergy barrier to fault growth. It was pointed out to us by S. M. Hu th at the equation that is shown only accounts for the reaction of inters titials at the dislocation loop boundary. By using this equation, we i n fact assumed some reaction-limited component of dislocation loop gro wth. SUPREM-IV was used to solve the diffusion of interstitials throug hout the sample, C-I(depth), and in so doing, solved for the interstit ial concentration that was used in Eq. (11).