ELECTROCHEMICAL FABRICATION OF A P-TYPE SILICON-POLYTHIOPHENE P-N-JUNCTION DIODE

Authors
SHI GQ YU B XUE G SHI JB LI C
Citation
Gq. Shi et al., ELECTROCHEMICAL FABRICATION OF A P-TYPE SILICON-POLYTHIOPHENE P-N-JUNCTION DIODE, Journal of the Chemical Society, Chemical Communications, (22), 1994, pp. 2549-2550
Citations number
11
Categorie Soggetti
Chemistry
Journal title
Journal of the Chemical Society, Chemical Communications → ACNP
ISSN journal
00224936
Issue
22
Year of publication
1994
Pages
2549 - 2550
Database
ISI
SICI code
0022-4936(1994):22<2549:EFOAPS>2.0.ZU;2-4
Abstract
A p-n junction thin film was fabricated by electrochemical deposition of polythiophene bn a p-type silicon substrate, followed by controlled -potential electrochemical doping to make the polythiophene layer cati on doped.