GROWTH OF (YBA2CU3O7)M (PRBA2CU3-XGAXO7)N SUPERLATTICES BY PULSED-LASER DEPOSITION/

PrBa2Cu3-xGa(x)O7 thin films up to x = 0.2 and YBa2Cu3O7/PrBa2Cu2.8Ga0 .2O7 superlattices have been grown by pulsed laser deposition (PLD) on {100} SrTiO3 substrate. At a growth temperature of 785-degrees-C, the multilayers have c-axis normal to the substrate surface and satellite peaks have been observed up to i = +/- 3 on X-ray diffraction spectra . At a lower growth temperature the structure becomes oriented with a- axis normal to the growth interface. Secondary-ion mass spectrometry r eveals no interdiffusion between Y and Pr and no diffusion of Ga into the YBa2Cu3O7 layer. The RBS minimum yield indicates the high epitaxia l relation between the substrate and the superlattice.