SYNTHESIS, X-RAY STRUCTURE AND APPLICATION OF BIS[ALLYLAMINE(DIMETHYL)GALLIUM(III)] AS A PRECURSOR FOR THE GROWTH OF GAP LAYERS BY MOVPE

Authors
SCHUMANN H JUST O NICKEL S WEIMANN R GOTTSCHALCH V KELLER BP SCHWABE R
Citation
H. Schumann et al., SYNTHESIS, X-RAY STRUCTURE AND APPLICATION OF BIS[ALLYLAMINE(DIMETHYL)GALLIUM(III)] AS A PRECURSOR FOR THE GROWTH OF GAP LAYERS BY MOVPE, Advanced materials, 6(10), 1994, pp. 768-772
Citations number
33
Categorie Soggetti
Material Science
Journal title
Advanced materials → ACNP
ISSN journal
09359648
Volume
6
Issue
10
Year of publication
1994
Pages
768 - 772
Database
ISI
SICI code
0935-9648(1994)6:10<768:SXSAAO>2.0.ZU;2-2
Abstract
Gallium precursors for the growth of gallium-based materials from the vapor phase still need to be improved in terms of their safety and han dling properties, especially with respect to their pyrophoricity, air and moisture sensitivity, and toxicity. A new gallium precursor is rep orted, the first diorganogalliumamine, which exhibits a more favorable safety profile, and its use in the preparation of N-doped GaP is disc ussed.