CONJUGATED POLYMER LIGHT-EMITTING-DIODES ON SILICON SUBSTRATES

Citation
Dr. Baigent et al., CONJUGATED POLYMER LIGHT-EMITTING-DIODES ON SILICON SUBSTRATES, Applied physics letters, 65(21), 1994, pp. 2636-2638
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
21
Year of publication
1994
Pages
2636 - 2638
Database
ISI
SICI code
0003-6951(1994)65:21<2636:CPLOSS>2.0.ZU;2-M
Abstract
We report the fabrication of polymer electroluminescent devices on dop ed silicon substrates. An electron-injecting aluminum electrode is the rmally evaporated onto the silicon substrate, and a layer of a high el ectron affinity conjugated polymer, poly(cyanoterephthalylidene), CN-P PV, is then spin coated onto this. A hole-transporting layer of poly(p -phenylene vinylene), PPV, is formed on top of the CN-PPV layer by the rmal conversion of a spin-coated layer of the sulphonium precursor pol ymer. Finally, a transparent hole-injecting top electrode of indium-ti n oxide is formed by rf sputtering. These devices show efficient red e lectroluminescence, with emission from the CN-PPV layer. (C) 1994 Amer ican Institute of Physics.