We report the fabrication of polymer electroluminescent devices on dop
ed silicon substrates. An electron-injecting aluminum electrode is the
rmally evaporated onto the silicon substrate, and a layer of a high el
ectron affinity conjugated polymer, poly(cyanoterephthalylidene), CN-P
PV, is then spin coated onto this. A hole-transporting layer of poly(p
-phenylene vinylene), PPV, is formed on top of the CN-PPV layer by the
rmal conversion of a spin-coated layer of the sulphonium precursor pol
ymer. Finally, a transparent hole-injecting top electrode of indium-ti
n oxide is formed by rf sputtering. These devices show efficient red e
lectroluminescence, with emission from the CN-PPV layer. (C) 1994 Amer
ican Institute of Physics.