IMPROVED MODE-STABILITY IN LOW-THRESHOLD SINGLE-QUANTUM-WELL NATIVE-OXIDE DEFINED VERTICAL-CAVITY LASERS

Single quantum well active region vertical-cavity surface-emitting las ers (VCSELs) fabricated using a ''native-oxide'' technique are compare d with three quantum well active region VCSELs. The single quantum wel l active region exhibits improved transverse mode stability under a va riety of operating conditions. The suggested reason is due to the redu ced gain of the single quantum well, which results in greater lasing m ode selectivity. For the single quantum well active region, a continuo us wave threshold current of 178 mu A at room temperature is measured for a 5 mu m diam VCSEL and a pulsed threshold of 160 mu A. (C) 1994 A merican Institute of Physics.