BIAS DEPENDENT RECOVERY-TIME OF ALL-OPTICAL RESONANT NONLINEARITY IN AN INGAASP INGAASP MULTIQUANTUM-WELL WAVE-GUIDE/

Authors
DAY IE SNOW PA PENTY RV WHITE IH GRANT RS KENNEDY GT SIBBETT W DAVIES DAO FISHER MA ADAMS MJ
Citation
Ie. Day et al., BIAS DEPENDENT RECOVERY-TIME OF ALL-OPTICAL RESONANT NONLINEARITY IN AN INGAASP INGAASP MULTIQUANTUM-WELL WAVE-GUIDE/, Applied physics letters, 65(21), 1994, pp. 2657-2659
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
21
Year of publication
1994
Pages
2657 - 2659
Database
ISI
SICI code
0003-6951(1994)65:21<2657:BDROAR>2.0.ZU;2-U
Abstract
The refractive nonlinearities due to bandfilling and the plasma effect in a multiquantum well buried heterostructure semiconductor waveguide under reverse bias are probed using self-phase modulation techniques. Modeling of the self-phase modulation has allowed the magnitude of th e phase modulation and nonlinearity recovery time constant to be extra cted. rr radians phase shift has been obtained for a coupled pulse ene rgy of 32 pJ. The nonlinearity recovery time constant is 18+/-3 ps for an applied field of 34 MV m(-1), limited by thermionic emission from the quantum wells. (C) 1994 American Institute of Physics.