Textured cubic baron nitride (c-BN) films have been deposited on (220)
oriented crystallized polycrystalline nickel substrate by a hot filam
ent assisted rf plasma chemical vapor deposition method. X-ray diffrac
tion shows that the films are (220) preferentially grown, the peak rat
io of (220) to the main peak [i.e., the (111) peak] is about 5.2. The
scanning electron microscopy images exhibit regular grain shapes. Most
of the grains are rectangular, also indicating the (220) growth. The
grain size is about 5 mu m. The well-matched Ni lattice with c-BN, the
catalytic effect of Ni, and the appropriate rf bias are considered to
be the key factors in the textured growth. (C) 1994 American Institut
e of Physics.