POSSIBLE LIFETIME-LIMITING DEFECT IN 6H SIC

We reveal and investigate a possible lifetime-limiting defect in as-gr own 6H SiC by optical detection of magnetic resonance (ODMR). This def ect is shown to be a deep level center (with an energy level at about E(c)-1.1 eV), evident from the related deep photoluminescence emission and a photo-excitation spectrum of the ODMR signal. The fact that thi s defect has been observed in both bulk crystals and epilayers, regard less of their doping type, indicates that this must be a common and ba sic defect in 6H SiC. (C) 1994 American Institute of Physics.