DEFECT GENERATION AND SUPPRESSION DURING THE IMPURITY-INDUCED LAYER DISORDERING OF QUANTUM-SIZED GAAS GAINP LAYERS/

Authors
THORNTON RL BOUR DP TREAT D PONCE FA TRAMONTANA JC ENDICOTT FJ
Citation
Rl. Thornton et al., DEFECT GENERATION AND SUPPRESSION DURING THE IMPURITY-INDUCED LAYER DISORDERING OF QUANTUM-SIZED GAAS GAINP LAYERS/, Applied physics letters, 65(21), 1994, pp. 2696-2698
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
21
Year of publication
1994
Pages
2696 - 2698
Database
ISI
SICI code
0003-6951(1994)65:21<2696:DGASDT>2.0.ZU;2-4
Abstract
We have investigated both analytically and experimentally the mechanis ms for defect formation during interdiffusion of GaAs and GaInP. We fi nd that the analytical model predicts a critical thickness below which defects are not produced during this highly strained interdiffusion p rocess. Transmission electron microscopy analysis of diffused buried l ayers of varying thickness exhibits very good qualitative agreement wi th the analysis developed. (C) 1994 American Institute of Physics.