SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES

The standard deviation a, of the surface potential fluctuations affect ing metal-oxide-silicon carbide capacitors has been extracted from low frequency conductance and capacitance measurements. These fluctuation s may become very large for thermal oxides and aluminum-doped epilayer s. They must induce large errors in usual metal-oxide-semiconductor ch aracterization techniques and are most probably the main reason for ob serving an activated transport in silicon carbide inversion layers. (C ) 1994 American Institute of Physics.