QUANTUM-DOT INJECTION HETEROLASER WITH ULTRAHIGH THERMAL-STABILITY OFTHE THRESHOLD CURRENT UP TO 50-DEGREES-C

Authors
MAKSIMOV MV GORDEEV NY ZAITSEV SV KOPEV PS KOCHNEV IV LEDENTSOV NN LUNEV AV RUVIMOV SS SAKHAROV AV TSATSULNIKOV AF SHERNYAKOV YM ALFEROV ZI BIMBERG D
Citation
Mv. Maksimov et al., QUANTUM-DOT INJECTION HETEROLASER WITH ULTRAHIGH THERMAL-STABILITY OFTHE THRESHOLD CURRENT UP TO 50-DEGREES-C, Semiconductors, 31(2), 1997, pp. 124-126
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
2
Year of publication
1997
Pages
124 - 126
Database
ISI
SICI code
1063-7826(1997)31:2<124:QIHWUT>2.0.ZU;2-O
Abstract
Gaseous phase epitaxy from metal organic compounds is used to obtain a low-temperature injection laser with an active region based on In0.5G a0.5As/GaAs quantum dots. Optimizing the growth conditions and geometr ic parameters of the structure has made it possible to increase the ra nge of ultrahigh thermal stability in the threshold current (the chara cteristic temperature is T-0 = 385 K) up to 50 degrees C. (C) 1997 Ame rican Institute of Physics.