ELECTRON AND HOLE SPECTRA AND SELECTION-RULES FOR OPTICAL-TRANSITIONSIN GE1-XSIX GE HETEROSTRUCTURES/

Authors
ALESHKIN VY BEKIN NA
Citation
Vy. Aleshkin et Na. Bekin, ELECTRON AND HOLE SPECTRA AND SELECTION-RULES FOR OPTICAL-TRANSITIONSIN GE1-XSIX GE HETEROSTRUCTURES/, Semiconductors, 31(2), 1997, pp. 132-138
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
2
Year of publication
1997
Pages
132 - 138
Database
ISI
SICI code
1063-7826(1997)31:2<132:EAHSAS>2.0.ZU;2-K
Abstract
The electron and hole spectra in strained Ge1-xSix/Ge heterostructures grown on a (111) plane have been investigated. It is shown that the s tructure of the conduction band in these structures can be determined by investigating the polarization of their photoluminescence. The sele ction rules for indirect optical transitions have been found. (C) 1997 American Institute of Physics.