Em. Verbitskaya et al., FORMATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON AS A RESULT OF CYCLIC IRRADIATION AND ANNEALING, Semiconductors, 31(2), 1997, pp. 189-193
Transformation of radiation-induced defects in p(+)-n-n(+) structures
fabricated from high-resistivity n-type silicon subjected to cyclic ir
radiation and annealing is investigated. The kinetic behavior of the i
ncrease in the concentration of the C-i-O-i defects is analyzed as a f
unction of the detector fabrication process. During the second irradia
tion cycle a transformation of the defects, which were formed as a res
ult of annealing of the original radiation defects, is observed. The a
ppearance of ''hidden'' sources of deep center formation is revealed.
It is established that the presence of a higher oxygen concentration,
which arises in the samples as a result of the extended silicon oxidat
ion process, results in a more active complex-formation of carbon-cont
aining defects in comparison with samples with reduced oxygen content.
(C) 1997 American Institute of Physics.