FORMATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON AS A RESULT OF CYCLIC IRRADIATION AND ANNEALING

Transformation of radiation-induced defects in p(+)-n-n(+) structures fabricated from high-resistivity n-type silicon subjected to cyclic ir radiation and annealing is investigated. The kinetic behavior of the i ncrease in the concentration of the C-i-O-i defects is analyzed as a f unction of the detector fabrication process. During the second irradia tion cycle a transformation of the defects, which were formed as a res ult of annealing of the original radiation defects, is observed. The a ppearance of ''hidden'' sources of deep center formation is revealed. It is established that the presence of a higher oxygen concentration, which arises in the samples as a result of the extended silicon oxidat ion process, results in a more active complex-formation of carbon-cont aining defects in comparison with samples with reduced oxygen content. (C) 1997 American Institute of Physics.