OPTIMIZATION OF A POWER PSEUDOMORPHIC DOUBLE-HETEROJUNCTION FET

In this article we report the optimization of a power double heterostr ucture pseudomorphic FET. A 1D model is used for charge control calcul ation and a 2D simulation for breakdown analysis. These simple models have allowed us to determine the suitable doping densities and device structure for maximum current density and breakdown performances. The results have been applied to the design of a 0.3-mum x 70-mum device. At 33 GHz it delivers an output power density of 1 W/mm with 5.7-dB li near gain and 38% power added efficiency. (C) 1994 John Wiley & Sons, Inc.