INFLUENCE OF HYDROGEN ON THE ELECTRICAL AND OPTICAL-ACTIVITY OF MISFIT DISLOCATIONS IN SI SIGE EPILAYERS/

Photoluminescence spectroscopy and electron-beam-induced current (EBIC ) technique have been used to characterize misfit dislocations in Si/S iGe epilayers following hydrogen plasma treatment (T=200-500 degrees C ). Low temperature EBIC measurements showed that the majority (90%) of shallow levels associated with misfit dislocations were not passivate d, whereas deeper midgap levels are readily passivated. The dislocatio n (D bands) related luminescence features were all reduced in intensit y following hydrogen treatment; at T=300 degrees C the D1 was preferen tially passivated and could no longer be observed, whereas the other D bands although reduced in intensity could still be observed. Depassiv ation experiments showed that following posthydrogenation annealing at 600 degrees C the deep levels passivated as measured by EBIC and the D bands are regenerated. (C) 1994 American Institute of Physics.