FAST-NEUTRON IRRADIATION FOR CZOCHRALSKI-GROWN SILICON

Authors
XU YS LI YX LIU CC WANG HM
Citation
Ys. Xu et al., FAST-NEUTRON IRRADIATION FOR CZOCHRALSKI-GROWN SILICON, Applied physics letters, 65(22), 1994, pp. 2807-2808
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
22
Year of publication
1994
Pages
2807 - 2808
Database
ISI
SICI code
0003-6951(1994)65:22<2807:FIFCS>2.0.ZU;2-T
Abstract
In this investigation, Czochralski grown silicon (CZ-Si) was irradiate d by a fast neutron which can introduce irradiated defects into silico n and change the quality and density of point defects in silicon, by t he interaction between irradiated defects and oxygen, the controlled p recipitation of oxygen, and an excellent intrinsic gettering structure in CZ-Si during heat treatment cycles can be obtained easily. (C) 199 4 American Institute of Physics.