Textured diamond films have been deposited on single-crystal silicon s
ubstrates by microwave plasma-enhanced chemical vapor deposition. Seve
ral unconventional gas mixtures (CO2-CH4, CO2-C2H6, and CO2-C2H4) were
used in order to study the texturing formation within the diamond sta
bility region in the C-O-H phase diagram. Optical emission spectroscop
y was used to monitor the compositional dependence of the plasma emiss
ion. The obtained diamond films were characterized by scanning electro
n microscopy and x-ray diffraction. Diamond films deposited with all,
the gas mixtures showed very similar surface morphologies and (100) te
xturing was achieved only within a very narrow compositional range. Fi
nally, a correlation was found between texturing conditions and CPI an
d Ct line intensities in the plasma emission spectra. (C) 1994 America
n Institute of Physics.