PULSED-LASER DEPOSITION OF HIGH-QUALITY NBN THIN-FILMS

Pulsed laser deposition has been used to grow superconducting NbN thin films from niobium targets in a reactive gas atmosphere of N-2 (10% H -2). The structural and electrical properties of the deposited films h ave been determined as a function of substrate temperature and crystal lographic orientation. Highly textured NbN was deposited on MgO (100). Films deposited on MgO at 600 degrees C in 60 m Torr gas pressure wer e characterized by T-c=16.6 K, J(c) (4.2 K)=7.1 MA/cm(2), and lambda(0 )=3200 Angstrom. Films grown on amorphous fused silica, under the same conditions, were polycrystalline and characterized by T-c=11.3 K and J(c) (4.2 K)=1.8 MA/cm(2). (C) 1994 American Institute of Physics.