HIGH-RESOLUTION RUTHERFORD BACKSCATTERING STUDY OF ULTRATHIN YBACUO FILM GROWTH ON SRTIO3 AND MGO

Citation
D. Huttner et al., HIGH-RESOLUTION RUTHERFORD BACKSCATTERING STUDY OF ULTRATHIN YBACUO FILM GROWTH ON SRTIO3 AND MGO, Applied physics letters, 65(22), 1994, pp. 2863-2865
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
22
Year of publication
1994
Pages
2863 - 2865
Database
ISI
SICI code
0003-6951(1994)65:22<2863:HRBSOU>2.0.ZU;2-X
Abstract
Medium energy ion scattering in combination with an electrostatic high -resolution detector system was applied to study the initial growth of YBaCuO thin films on (100) SrTiO3 and MgO substrates. Ultrathin films with thicknesses in the range of 0.4 to 3.6 nm were deposited by inve rted cylindrical magnetron sputtering. From the absolute determination of coverage as a function of depth the following growth features were deduced: on both substrates the films grow in blocks of one unit cell and full. coverage with a homogeneous film is achieved at 3.6-nm thic kness. In the initial stage of nucleation, on SrTiO3 the growth of an additional block layer is initiated only after completion of the prece ding layer, while island growth is observed on MgO with different cove rage values on three layer levels appearing simultaneously. (C) 1994 A merican Institute of Physics.