DIRECT TUNNEL IONIZATION OF DEEP IMPURITIES IN THE ELECTRIC-FIELD OF FAR-INFRARED RADIATION

Authors
GANICHEV SD DIENER J PRETTL W
Citation
Sd. Ganichev et al., DIRECT TUNNEL IONIZATION OF DEEP IMPURITIES IN THE ELECTRIC-FIELD OF FAR-INFRARED RADIATION, Solid state communications, 92(11), 1994, pp. 883-887
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
92
Issue
11
Year of publication
1994
Pages
883 - 887
Database
ISI
SICI code
0038-1098(1994)92:11<883:DTIODI>2.0.ZU;2-U
Abstract
Ionization of semiconductor deep impurity centers has been observed in tile far infrared where photon energies are several factors of tall s maller than the binding energy of the impurities. It is shown that the ionization is caused at high intensities by direct tunnel ionization in tile electric field of the high power radiation. This optical metho d allows tile investigation of die tunnelling process at electric bias fields well below the threshold of avalanche breakdown.