A STUDY OF THE TEMPERATURE EFFECT ON MOS-TRANSISTOR (MOSFET)

A simple method to study the effect of temperature on metal-oxide-semi conductor transistor (MOSFET) is described. Capacitance-voltage (C-V) characteristics, for a MOSFET 2N 187 manufactured by BEL, were measure d at different temperatures. The principal effect of increasing temper ature on the shape of the C-V characteristics is the increase of minim um capacitance (C-min). C-min is also calculated theoretically on a th eory based on MOS diode and has shown that the transistor's source and drain are supplying excess carrier.