MODELS OF SLOW RELAXATION IN PARTICULATE AND THIN-FILM MATERIALS (INVITED)

Citation
Rw. Chantrell et al., MODELS OF SLOW RELAXATION IN PARTICULATE AND THIN-FILM MATERIALS (INVITED), Journal of applied physics, 76(10), 1994, pp. 6407-6412
Citations number
39
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
76
Issue
10
Year of publication
1994
Part
2
Pages
6407 - 6412
Database
ISI
SICI code
0021-8979(1994)76:10<6407:MOSRIP>2.0.ZU;2-0
Abstract
The development of a number of models of slow relaxation in magnetic m aterials is reviewed. A phenomenological theory based on the intrinsic energy barrier is shown to explain the form of time dependence of the magnetization, including the logarithmic time dependence observed for systems with a relatively wide distribution of energy barriers. This formulation gives rise to useful analytical results which give general ly good qualitative agreement with experiment. The slow relaxation is related to the irreversible magnetic behavior via a fictitious fluctua tion field H-f which itself determines a quantity called the activatio n volume V-act. Both H-f and V-act are related to the magnetization re versal process. For granular materials V-act is generally smaller than the grain size. Computer simulations based on the Monte Carlo method are applied to the investigation of the behavior of thin films with pe rpendicular anisotropy. Detailed comparisons of the simulation with ex perimental data demonstrate the relationship between V-act and the mic romagnetic magnetization reversal mode. Some recent models introducing thermal agitation into the micromagnetic formalism are discussed.