ULTRAFAST MONOLITHICALLY INTEGRATED INP-BASED PHOTORECEIVER - OEIC-DESIGN, FABRICATION, AND SYSTEM APPLICATION

An InP-based photoreceiver OEIC for lambda = 1.55 mu m with a bandwidt h of 27 GHz is reported, The receiver design, fabrication and characte rization is presented, The device consists of an optical waveguide-fed pin-photodiode and a coplanar traveling-wave amplifier being composed of four GaInAs-AlInAs-InP-HEMT's. The photodiode exhibits an external quantum efficiency of 30% and a 3-dB power bandwidth of 35 GHz, HEMT' s with 0.7-mu m gate length, integrated on semi-insulating optical wav eguide layers show cutoff frequencies f(T)/f(max) of 37/100 GHz at zer o gate bias, Traveling-wave amplifiers with 0.5-mu m gate HEMT's have 28-GHz bandwidth, The receiver OEIC is packaged into a module with fib er pigtail and operates successfully within an SDH based 20-Gb/s trans mission system. An overall system sensitivity of -30.5 dBm was achieve d at a BER = 10(-9) after signal transmission over 198-km dispersion s hifted fiber.