A DUAL-GATE FIELD EMITTER AND ITS INTEGRATION INTO A FLAT-PANEL DISPLAY

Authors
BUSTA HH POGEMILLER JE ZIMMERMAN BJ
Citation
Hh. Busta et al., A DUAL-GATE FIELD EMITTER AND ITS INTEGRATION INTO A FLAT-PANEL DISPLAY, Journal of micromechanics and microengineering, 4(3), 1994, pp. 106-109
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Mechanical
Journal title
Journal of micromechanics and microengineering → ACNP
ISSN journal
09601317
Volume
4
Issue
3
Year of publication
1994
Pages
106 - 109
Database
ISI
SICI code
0960-1317(1994)4:3<106:ADFEAI>2.0.ZU;2-3
Abstract
Single tip and arrays of n-type, (100) monocrystalline silicon field e mitters were fabricated with a dual-gate structure. The field at the t ip can be expressed as E = beta (V(gl) + V(ge)), in which V(gl) and V( gr) are the left and right gate voltages. By applying a gate voltage b elow the threshold of emission to one of the gates, the device can the n be activated by the second gate. Integration of this device into a m atrix-addressable array can be accomplished via a single cross-over st ructure without the need of emitter isolation.