CRYSTAL-GROWTH AND ELECTRICAL STUDIES OF NASB3F10 CRYSTALS

Single crystals of NaSb3F10 have been grown from solution by a slow-ev aporation technique at constant temperature (305 K). The grown crystal s were confirmed by chemical and X-ray analyses. The electrical conduc tivity studies of NaSb3F10 have been carried out in the temperature ra nge from 30 to 190-degrees-C. The dielectric constant (epsilon) and di electric loss (tan delta) were determined as a function of frequency i n the range from 100 Hz to 100 kHz and in the temperature range from 3 0 to 190-degrees-C. The values of epsilon11 and epsilon13 for NaSb3F10 at 100 kHz are about 14 and 19 respectively.