ELECTRONICALLY INDUCED DEFECT FORMATION IN XE-DOPED SOLID KR

Lattice defect formation induced by excitation of excimer-type molecul ar centers in the Kr matrix is studied by the luminescence VUV spectro scopy method. The samples are excited by slow electrons. It is establi shed that the trapping of electronic excitations in the regular lattic e regions produces the formation of permanent point defects. The exper imental data on the ''ground state'' mechanism of defect formation ass ociated with radiative decay of electronic excitations and some suppor ting evidence for the existence of an ''excited state'' mechanism are obtained. The efficiency of the latter mechanism is found to correlate with the lifetime of electronic excitation of the molecular centers. This mechanism is shown to be electronically thermal. A model of defec t creation and stabilization in the excited state is proposed which co nsists in that the molecular center is displaced to a noncentrosymmetr ic position followed by its reorientation. The model parameters for th e center Kr-2 are estimated.