A MODEL FOR THE CONCENTRATION PROFILE OF PXOY IN THE INTERWAFER GAS-PHASE ON PHOSPHORUS DOPING OF SILICON USING A SOLID PLANAR DIFFUSION SOURCE

Authors
PEEV G ROUSEVA M
Citation
G. Peev et M. Rouseva, A MODEL FOR THE CONCENTRATION PROFILE OF PXOY IN THE INTERWAFER GAS-PHASE ON PHOSPHORUS DOPING OF SILICON USING A SOLID PLANAR DIFFUSION SOURCE, Modelling and simulation in materials science and engineering, 2(6), 1994, pp. 1143-1152
Citations number
13
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Modelling and simulation in materials science and engineering → ACNP
ISSN journal
09650393
Volume
2
Issue
6
Year of publication
1994
Pages
1143 - 1152
Database
ISI
SICI code
0965-0393(1994)2:6<1143:AMFTCP>2.0.ZU;2-U
Abstract
A mathematical model for the concentration profile of PxOy in the inte rwafer gas phase on phosphorus doping of silicon using a solid planar diffusion source has been derived for the case of internal-diffusion c ontrol of PxOy emission from the source and short time of contact betw een the wafers and the streaming gas. The model allows us to evaluate the effects of various process parameters on the doping characteristic s. Its predictions for the influence of pressure, temperature and gas flow rate on the sheet resistance uniformity correspond to the experim ental results reported in the literature.