THICK AND STRESS-FREE SENDUST FILMS ON SILICON FOR RECORDING HEAD CORES

Citation
J. Daval et al., THICK AND STRESS-FREE SENDUST FILMS ON SILICON FOR RECORDING HEAD CORES, IEEE transactions on magnetics, 30(6), 1994, pp. 3930-3932
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
30
Issue
6
Year of publication
1994
Part
1
Pages
3930 - 3932
Database
ISI
SICI code
0018-9464(1994)30:6<3930:TASSFO>2.0.ZU;2-Y
Abstract
LETI's recording heads technology requires the deposition of thick Sen dust films on Silicon substrates, both materials having very different thermal expansion coefficients. Despite of this unfavorable condition , adherent and stress-controlled films, up to 10 mu m thick, have firs t been obtained by facing target sputtering under Ar + nitrogen atmosp here whose influence is great on films microstructure. Stress-free sta te has then been achieved by cumulative rapid thermal annealing when s tarting from compressive stress-induced films.