LETI's recording heads technology requires the deposition of thick Sen
dust films on Silicon substrates, both materials having very different
thermal expansion coefficients. Despite of this unfavorable condition
, adherent and stress-controlled films, up to 10 mu m thick, have firs
t been obtained by facing target sputtering under Ar + nitrogen atmosp
here whose influence is great on films microstructure. Stress-free sta
te has then been achieved by cumulative rapid thermal annealing when s
tarting from compressive stress-induced films.