A fabrication process for the sputtered (Co, Zn)-doped gamma-Fe2O3 Thi
n films with quite a short reduction time (10 minutes) at temperature
between 350-370 degrees C and with oxidation time about 2O minutes at
temperature between 310-330 degrees C has been established. It has bee
n observed that, with a few percent of Co and Zn content, the Zn dopan
t has the effect of producing higher saturation magnetization and bett
er thermal stability of coercivity, as well as better suppressing grai
n growth effect during the heat treatments when these films are compar
ed to gamma-Fe2O3 thin films doped with Co only.